The SICR6650, SICRB6650, SICRD6650 and SICRF6650 is a series of 650V Silicon Carbide (SiC) rectifier devices available in industry standard TO-220AC, D2PAK, DPAK and ITO-220AC package outlines. The SICR series provides extremely fast Schottky reverse recovery times (theoretically zero) that are independent of temperature extremes. Additionally, conduction losses are minimized as result of a low forward voltage and very low reverse leakage current. The combination of low switching loss, low conduction loss and high voltage capability make the SICR series the ideal high voltage rectifier for high frequency, energy sensitive applications where temperature extremes are expected.
Features
• High reverse voltage capability of 650V
• Continuous forward current capability of 6A (TC=150oC, 50% D/C)
• Reverse recovery time virtually independent of temperature change
• Low total conduction losses (VF=1.5V, IR=10 μA, typical at TJ=25oC)
• Half sine wave (8.3ms) forward surge rating of 60A needed for reactively loaded circuits
• Maximum junction operating temperature of 175oC
• Industry standard package outlines for design flexibility
• Applications
Bypass diode for solar energy micro-inverters
Flyback diode in high frequency switching circuits
Power Factor Correction (PFC)
Output rectification of high frequency power supplies
Voltage clamping
Support Material
Data Sheet
